Development of a JFET Model with Increased Accuracy: Measurements of Wrangling Data, Acquisition and Model Analysis

ENG: Junction gate field – effect transistors have a significant role in the modern electronics. Simulation of the electronic schematics is a crucial part of the modern devices development. At the present time an existent model are used. A drawbacks of the exiting JFET models, with are commonly used during electronic schematics simulation a described. For the tasks of precision simulation the simple approximation functions and switching conditions lead to accuracy loss. A general purpose and specialized hardware and software complex was created to acquire measurement data. This measurement complex gives as possibility to acquire measurement data in automatic and semi-automatic modes. A bulk amount of data about selected JFET species was collected. According to this data a new model was proposed. This model allows us identify parameters in sequence, which significantly decreases the possibility of the identification errors. Proposed model requires more complex calculations to achieve results, and more data to conduct parametric identification. But as the result, new model provides better agreement with experimental data, especially in low-voltage regimes. New model allows us to decrease simulation error level from the 20% to 1—5%. The proposed model provides better qualitative conforming to the experimental data.